Data for reference zeng-apl-71-1368

Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells

K. C. Zeng, J. Y. Lin, H. X. Jiang, A. Salvador, G. Popovici, H. Tang, W. Kim, H. Morkoc

Applied Physics Letters 71(10), 1368 (1997).

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This item is cited by the following items in the database:

  1. X-ray reciprocal lattice mapping and photoluminescence of GaN/GaAlN Multiple Quantum Wells; strain induced phenomena.

Contributed by A submitted manuscript, on Tuesday, July 21, 1998 11:59:52 AM

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