kapolnek-apl-71-1204

Data for reference kapolnek-apl-71-1204

Anisotropic epitaxial lateral growth in GaN selective area epitaxy

D. Kapolnek, S. Keller, R. Vetury, R.D. Underwood, P. Kozodoy, S.P. DenBaars, U.K. Mishra

Applied Physics Letters 71(9), 1204 (1997).

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This item is cited by the following items in the database:

Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD
Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates

Contributed by Hugues Marchand from morgana.ucsb.edu. on February 4, 1998 7:54:35 PM

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