Data for reference narukawa-apl-70-981Role of self-formed InGaN quantum dots for exiton localization in the purple laser diode emitting at 420 nm
Y. Narukawa, Y. Kawakami, M. Funato, S. Fujita, S. Fujita, S. Nakamura
Applied Physics Letters 70(8), 981 (1997).
Structural analysis using TEM and energy-dispersive x-ray microanalysis
performed on InGaN multiple quantum well laser diode. Contrast of light
and shade in well layers found to correspond to difference in In
composition. Main radiative recombination attributed to exitons localized
at deep traps ascribed to In-rich regions acting as quantum dots.
This item is cited by the following items in the database:
- Characteristics Of Room Temperature-CW Operated InGaN
Multi-Quantum-Well-Structure Laser Diodes
- Characterization of InGaN MQW structures for blue semiconductor laser diodes
- GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
- Evidence of 2D-3D transition during the first stages of GaN growth on AlN
- Transient four wave mixing experiments on GaN
- Time-resolved
photoluminescence studies of InGaN/GaN multiple quantum wells
- Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes
- On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
- The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in InxGa1-xN quantum wells
Contributed by A submitted manuscript, on Tuesday, March 11, 1997 2:57:49 PM
Modified by Chris Youtsey from nantucket.ccsm.uiuc.edu. on Tuesday, April 8, 1997 11:05:07 PM
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