Data for reference walker-apl-70-949

AlGaN (0<x<1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition

D. Walker, X. Zhang, A. Saxler, P. Kung, J. Xu, M. Razeghi

Applied Physics Letters 70(8), 949 (1997).

Cutoff wavelengths from 365 to 200 nm. Effective majority carrier lifetime in AlGaN estimated from frequency-dependent photoconductivity measurements to be from 6-35 ms. Noise spectrum dominated by Johnson noise at high frequency for low-Al-composition samples.

This item is cited by the following items in the database:

  1. Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors
  2. MOVPE Growth and Structural Characterization of AlxGa1-xN
  3. Ultraviolet Photodetectors Based on AlxGa1-xN Schottky Barriers

Contributed by Chris Youtsey from nantucket.ccsm.uiuc.edu. on Tuesday, April 8, 1997 11:00:43 PM

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