Data for reference nakamura-apl-70-868

Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyotu

Applied Physics Letters 70(7), 868 (1997).

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This item is cited by the following items in the database:

  1. MOVPE Growth and Structural Characterization of AlxGa1-xN

Contributed by A submitted manuscript, on September 17, 1997 12:19:25 PM

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