Data for reference im-apl-70-631

Radiative carrier lifetime, momentum matrix element, and hole effective mass in GaN

J.S. Im, A. Moritz, F. Steuber, V. Haerle, F. Scholz, A. Hangleiter

Applied Physics Letters 70(5), 631 (1997).

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This item is cited by the following items in the database:

  1. The role of piezoelectric fields in GaN-based quantum wells
  2. Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

Contributed by Chris Youtsey from nantucket.ccsm.uiuc.edu. on Tuesday, April 8, 1997 10:47:50 PM

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