Data for reference piner-apl-70-461

Effect of hydrogen on the indium incorporation in InGaN epitaxial films

EL Piner, MK Behbehani, NA El-Masry, FG McIntosh, JC Roberts, KS Boutros, SM Bedair

Applied Physics Letters 70(4), 461 (1997).

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This item is cited by the following items in the database:

  1. GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
  2. The role of gaseous species in group-III nitride growth
  3. Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor

Contributed by John C. Zolper from sahp604.sandia.gov. on Friday, February 21, 1997 1:45:17 PM

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