Data for reference rosner-apl-70-420

Correlation of cathodoluninescence inhomogeneity with microstructural defects in eptaxial GaN grown by metalorganic chemical-vapor deposition

SJ Rosner, EC Carr, MJ Ludowise, G Girolami, HI Erikson

Applied Physics Letters 70(4), 420 (1997).

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This item is cited by the following items in the database:

  1. Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si
  2. Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
  3. Dislocation Density of GaN Grown by Hydride Vapor Phase Epitaxy
  4. Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

Contributed by John C. Zolper from sahp604.sandia.gov. on Friday, February 21, 1997 1:40:25 PM

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