Data for reference nishio-apl-70-3431

Characterization of InGaN MQW structures for blue semiconductor laser diodes

J. Nishio, L. Sugiura, H. Fujimoto, Y. Kokubun, K. Itaya

Applied Physics Letters 70(25), 3431 (1997).

Structural characterization of InGaN/GaN heterostructures.

This item cites the following items in the database:

  1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
  2. Shortest wavelength semiconductor laser diode
  3. Room Temperature pulsed operation of nitride based MQW laser diodes with cleaved facets on conventional c-face sapphire substrates
  4. Room Temperature CW Operation of InGaN MQW Structure Laser Diodes
  5. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
  6. Role of self-formed InGaN quantum dots for exiton localization in the purple laser diode emitting at 420 nm

Contributed by S. Strite from internet-gateway-x.zurich.ibm.com. on Friday, July 4, 1997 7:54:41 AM

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