Data for reference look-apl-70-3377

Degenerate Layer at GaN/sapphire interface: Influence on Hall-effect measurements

D. Look, R. Molnar

Applied Physics Letters 70(25), 3377 (1997).

A degenerate interface layer is proposed to better fit the Hall data on HVPE GaN/sapphire layers. The degeneracy is caused by the highly defected interface.

This item cites the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Emerging GaN Based Devices
  3. p-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation
  4. High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes
  5. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
  6. Semiconductor ultraviolet detectors
  7. CW Operation of Short-Channel GaN/AlGaN Doped Channel Heterostructure Field Effect Transistors at 10 GHz and 15 GHz

This item is cited by the following items in the database:

  1. Electrical Profiles in GaN/Al2O3 Layers with Conductive Interface Regions

Contributed by S. Strite from internet-gateway-x.zurich.ibm.com. on Friday, July 4, 1997 7:44:09 AM

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