Data for reference qiu-apl-70-3242

Growth of single phase GaAs1-xNx with high nitrogen concentration by MOMBE

Y. Qiu, S. A. Nikishin, H. Temkin, N. N. Faleev, Yu. A. Kudriavtsev

Applied Physics Letters 70(24), 3242 (1997).

GaAsN with as much as 10% N content.

This item cites the following items in the database:

  1. Electronic structure and phase stability of GaAs1-xNx alloys
  2. Giant and composition-dependent optical bowing coefficient in GaAsN alloys
  3. Growth of GaAsN alloys by low-pressure metalorganic chemical vapor deposition using plasma-cracked NH3

This item is cited by the following items in the database:

  1. Optical Properties of GaNAs Grown by MBE

Contributed by S. Strite from internet-gateway-x.zurich.ibm.com. on Tuesday, June 24, 1997 9:43:18 AM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Tuesday, May 3, 2005 4:30:21 PM.
© 1998 The Materials Research Society