Data for reference yu-apl-70-3209Optical Properties of Wurtzite Structure GaN on Sapphire around Fundamental Absorption Edge (0. 78 - 4. 77 eV) by Spectroscopic Ellipsometry and the Optical Transmission Method
G. Yu, G. Wang, H. Ishikawa, M. Umeno, T. Soga, T. Egawa, J. Watanabe, T. Jimbo
Applied Physics Letters 70, 3209 (1997).
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- Spectroscopic Ellipsometry on GaN: Comparison Between Hetero-epitaxial Layers and Bulk Crystals
- Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions
Contributed by A submitted manuscript, on Thursday, July 2, 1998 2:46:07 PM
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