Data for reference bernardini-apl-70-2990

Theoretical evidence for efficient p-type doping of GaN using Be

F. Bernardini, V. Fiorentini, A. Bosin

Applied Physics Letters 70, 2990 (1997).

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This item is cited by the following items in the database:

  1. Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).

Contributed by A submitted manuscript, on Monday, July 6, 1998 11:22:52 PM

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