Data for reference chichibu-apl-70-2822

Luminescence from localized states in InGaN epilayers

S Chichibu, T Azuhata, T Sata, S Nakamura

Applied Physics Letters 70(21), 2822 (1997).

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This item is cited by the following items in the database:

  1. On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
  2. The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in InxGa1-xN quantum wells
  3. Development of High Power Green Light Emitting Diode Chips

Contributed by John C. Zolper from sahp947.sandia.gov. on Tuesday, May 27, 1997 7:12:32 PM

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