Data for reference nakamura-apl-70-2753

Subband emissions from InGaN multi-quantum-well laser diodes under room-temperature continous wave operation

S Nakamura, M Senoh, S Nagahama, N Iwasa, T Yamada, T Matsusita, Y Sugimoto, H Kiyoku

Applied Physics Letters 70(20), 2753 (1997).

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This item is cited by the following items in the database:

  1. Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC
  2. On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect

Contributed by John C. Zolper from sahp947.sandia.gov. on Tuesday, May 27, 1997 7:31:06 PM

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