Data for reference chichibu-apl-70-2085Optical properties of tensile-strained wurtzite GaN epitaxial layers
S. Chichibu, T. Azuhata, T. Sota, H. Amano, I. Akasaki
Applied Physics Letters 70, 2085 (1997).
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This item is cited by the following items in the database:
- Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
- Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy
- Uniaxial Strain Effect on the Electronic and Optical Properties of Wurtzite GaN/AlGaN Quantum Well Lasers
- Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
Contributed by A submitted manuscript, on Monday, July 6, 1998 11:23:42 PM
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