Data for reference edwards-apl-70-2001

Variation of GaN valence bands with biaxial stress and quantification of residual stress

N. V. Edwards, S. D. Yoo, M. D. Bremser, T. W. Weeks, O. H. Nam, R. F. Davis, H. Lui, R. A. Stall, M. N. Horton, N. R. Perkins, T. F. Kuech, D. E. Aspnes

Applied Physics Letters 70, 2001 (1997).

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This item is cited by the following items in the database:

  1. Free excitons in strained MOCVD-grown GaN layers

Contributed by A submitted manuscript, on Tuesday, February 4, 2003 10:08:27 AM

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