Data for reference nakamura-apl-70-1417

Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser dides with lifetimes of 27 hours

S Nakamura, M Senoh, S Nagahama, N Iwasa, T Yamada, T Matsushita, Y Sugimoto, H Kiyoku

Applied Physics Letters 70(11), 1417 (1997).

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This item is cited by the following items in the database:

  1. GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
  2. Yellow luminescence in Mg-doped GaN
  3. Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
  4. Optically Pumped InGaN/GaN Double Heterostructure Lasers with Cleaved Facets
  5. High quality GaN films - growth and properties
  6. Luminescence and ESR Spectra of GaN:Si below and above Mott Transition
  7. Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
  8. Visible-Blind UV Digital Camera Based On a 32 x 32 Array of GaN/AlGaN p-i-n Photodiodes
  9. UV-Specific (320-365 nm) Digital Camera Based On a 128x128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes

Contributed by John C. Zolper from sahp315.sandia.gov. on Thursday, March 27, 1997 6:09:07 PM

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