Data for reference singh-apl-70-1089

Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition

R Singh, D Doppalapudi, TD Moustakas, LT Romano

Applied Physics Letters 70(9), 1089 (1997).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Suppression of phase separation in InGaN due to elastic strain
  2. On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect

Contributed by John C. Zolper from sahp315.sandia.gov. on Thursday, March 27, 1997 6:37:01 PM


If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.


MRS Internet Journal of Nitride Semiconductor Research

last updated Monday, May 2, 2005 5:35:50 PM.
© 1998 The Materials Research Society