Data for reference vaudo-apl-79-2779

Characteristics of light-emitting diodes based on GaN p-n junctions grown by plasma assisted molecular beam epitaxy

R. P. Vaudo, I. D. Goepfert, T. D. Moustakas, D. M. Beyea, T. J. Frey, K. Meehan

Applied Physics Letters 79(5), 2779 (1996).

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This item is cited by the following items in the database:

  1. Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's

Contributed by A submitted manuscript, on Monday, July 6, 1998 10:41:55 PM

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