Data for reference redwing-apl-69-963

Two-dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H(en-dash) SiC and sapphire substrates

JM Redwing, MA Tischler, JS Flynn, S Elhamri, M Ahoujja, RS Newrock, WC Mitchel

Applied Physics Letters 69(7), 963 (1996).

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This item is cited by the following items in the database:

  1. Raman characterization of the optical phonons in AlxGa1-xN layers grown by MBE and MOCVD
  2. Schottky Diodes on MOCVD Grown AlGaN Films.

Contributed by A.E. Nikolaev from shuttle.ioffe.rssi.ru. on Saturday, September 21, 1996 3:16:53 PM

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