Data for reference leszczynski-apl-69-73

Lattice parameters of gallium nitride

M. Leszczynski, H. Teisseyre, T. Suski, I. Grzegory, M. Bockowski, J. Jun, S. Porowski, K. Pakula, J. M. Baranowski , C. T. Foxon, T. S. Cheng

Applied Physics Letters 69(1), 73 (1996).

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This item is cited by the following items in the database:

  1. Growth, Doping and Characterization of AlxGa1-xN Thin Film Alloys on 6H-SiC(0001) Substrates
  2. Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
  3. Hardness and fracture toughness of bulk single crystal gallium nitride
  4. Physical Properties of Bulk GaN Crystals Grown by HVPE

Contributed by Andrej E. Nikolaev from shuttle.ioffe.rssi.ru. on Sunday, June 30, 1996 7:46:32 AM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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