Data for reference kim-apl-69-559

Mg-doped p-type GaN grown by reactive molecular beam epitaxy

W Kim, A Salvador, AE Botchkarev, O Aktas, SN Mohammad, H Morcoc

Applied Physics Letters 69(4), 559 (1996).

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This item is cited by the following items in the database:

  1. Yellow luminescence in Mg-doped GaN
  2. Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).

Contributed by A.E. Nikolaev from shuttle.ioffe.rssi.ru. on Saturday, July 13, 1996 12:35:57 PM

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