Data for reference thon-apl-69-55

High temperature adduct formation of trimethylgallium and ammonia

A. Thon, T. F. Kuech

Applied Physics Letters 69(1), 55 (1996).

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This item is cited by the following items in the database:

  1. The role of gaseous species in group-III nitride growth
  2. Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
  3. Novel approach to simulation of group-III nitrides growth by MOVPE

Contributed by Andrej E. Nikolaev from shuttle.ioffe.rssi.ru. on Sunday, June 30, 1996 7:36:30 AM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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