Data for reference zolper-apl-69-538

Sputtered AlN encapsulant for high-temperature annealing of GaN

JC Zolper, DJ Rieger, AG Baca, SJ Pearton, JW Lee, RA Stall

Applied Physics Letters 69(4), 538 (1996).

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This item is cited by the following items in the database:

  1. Implantation Activation Annealing of Si-Implanted Gallium Nitride at Temperatures >1100°ree;C

Contributed by A.E. Nikolaev from shuttle.ioffe.rssi.ru. on Saturday, July 13, 1996 12:25:54 PM

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