Data for reference chichibu-apl-69-4188

Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

S. Chichibu, T. Azuhata, T. Sota, S. Nakamura

Applied Physics Letters 69, 4188 (1996).

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This item is cited by the following items in the database:

  1. Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes
  2. Characterization of InGaN MQW structures for blue semiconductor laser diodes
  3. Urbach-Martienssen tails in a wurtzite GaN epilayer
  4. GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
  5. Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells
  6. Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes
  7. The role of piezoelectric fields in GaN-based quantum wells
  8. On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
  9. The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in InxGa1-xN quantum wells
  10. Development of High Power Green Light Emitting Diode Chips

Contributed by A submitted manuscript, on Tuesday, March 11, 1997 2:57:28 PM
Modified by Shigefusa Chichibu from nknspc03.ee.noda.sut.ac.jp. on Tuesday, April 1, 1997 3:08:36 AM

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