Data for reference tanaka-apl-69-4096

Self-assembling GaN quantum dots on AlxGa1-xN surfaces using a surfactant

S Tanaka, S Iwai, Y Aoyagi

Applied Physics Letters 69(26), 4096 (1996).

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This item is cited by the following items in the database:

  1. Evidence of 2D-3D transition during the first stages of GaN growth on AlN
  2. Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces
  3. Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Friday, December 13, 1996 12:00:10 PM

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