Data for reference nakamura-apl-69-4056

Room Temperature CW Operation of InGaN MQW Structure Laser Diodes

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku

Applied Physics Letters 69(26), 4056 (1996).

The first RT CW InGaN LD. Lifetime is only 1 sec due to excessive heat generation.

This item cites the following items in the database:

  1. Superbright Green InGaN Single-Quantum-Well-Structure Light-Enmitting Diodes
  2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
  3. InGaN MQW Structure Laser Diodes with Cleaved Mirror Facets
  4. InGaN multi-quantum-well structure laser diodes grown on MgAl2O4 substrates
  5. Ridge-geometry InGaN MQW structure laser diodes
  6. Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
  7. p-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation
  8. Schottky barrier photodetector based on Mg-doped p-type GaN films
  9. In situ monitoring of GaN growth using interference effects
  10. Spontaneous and stimulated emission from photopumped GaN grown on SiC
  11. Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature
  12. Room-temperature violet stimulated emission from optically pumped AlGaN/GaInN double heterostructure
  13. Optically pumped GaN/Al0.1Ga0.9N double- heterostructure ultraviolet laser
  14. Room-temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxy
  15. Temperature dependence of photoluminescence from GaN

This item is cited by the following items in the database:

  1. Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes
  2. The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization
  3. Theoretical Analysis of the Threshold Current Density in GaN/AlGaN Strained QW Lasers with a Modulation-doped Structure
  4. Characterization of InGaN MQW structures for blue semiconductor laser diodes
  5. Urbach-Martienssen tails in a wurtzite GaN epilayer
  6. Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy
  7. Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy
  8. Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions
  9. Room Temperature Ohmic contact on n-type GaN using plasma treatment

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Friday, December 13, 1996 12:02:31 PM
Modified by S. Strite from 193.5.61.130 on Monday, January 6, 1997 8:51:42 AM

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