Data for reference drory-apl-69-4044

Hardness and fracture toughness of bulk single crystal gallium nitride

M. D. Drory, J. W. Ager III, T. Suski, I. Grzegory, S. Porowski

Applied Physics Letters 69(26), 4044 (1996).

First mechanical measurements on GaN using the Vickers indentation technique. Avg. hardness of GaN is 12+/-2 GPa. Fracture toughness is 0.79+/-0.10 MPa m1/2. Both values are about twice those of GaAs and consistent with those of a brittle ceramic.

This item cites the following items in the database:

  1. Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
  2. InGaN MQW Structure Laser Diodes with Cleaved Mirror Facets
  3. Lattice parameters of gallium nitride

This item is cited by the following items in the database:

  1. Hardness of bulk single-crystal GaN and AlN

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Friday, December 13, 1996 11:57:48 AM
Modified by S. Strite from 193.5.61.130 on Monday, January 6, 1997 9:13:11 AM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Thursday, April 28, 2005 10:18:26 AM.
© 1998 The Materials Research Society