Data for reference aktas-apl-69-3872

High temperature characteristics of AlGaN/GaN modulation doped field-effect transistors

O Aktas, ZF Fan, SN Mohammad, AE Botchkarev, H Morkoc

Applied Physics Letters 69(25), 3872 (1996).

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This item is cited by the following items in the database:

  1. High-temperature structural behavior of Ni/Au Contact on GaN(0001)

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Friday, December 13, 1996 11:52:53 AM

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