Data for reference yang-apl-69-3566

High quality GaN-InGaN heterostructures grown on (111) silicon substrates

JW Yang, CJ Sun, Q Chen, MZ Anwar, M Asif Khan, SA Nikishin, GA Seryogin, AV Osinsky, L Chernyak, H Temkin, C Hu, S Mahajan

Applied Physics Letters 69(23), 3566 (1996).

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This item is cited by the following items in the database:

  1. Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy
  2. Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy
  3. Nucleation of AlN on the (7×7) Reconstructed Silicon (1 1 1) Surface
  4. Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer

Contributed by A submitted manuscript, on Monday, June 30, 1997 9:33:57 PM
Modified by H. Marchand from montreal.ucsb.edu. on Wednesday, February 10, 1999 8:55:47 PM

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