Data for reference wiesmann-apl-69-3384

Gain spectra and stimulated emission in epitaxial (In,Al) GaN thin films

D. Wiesmann, I. Brener, L. Pfeiffer, M.A. Khan, C.J. Sun

Applied Physics Letters 69(22), 3384 (1996).

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This item cites the following items in the database:

  1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
  2. Optical gain in semiconductors
  3. Vertical-cavity, room-temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low- pressure metalorganic chemical vapor deposition
  4. Surface-mode stimulated emission from optically pumped GaInN at room temperature
  5. Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature
  6. Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition
  7. Optical gain of optically pumped Al0.1Ga0.9N/GaN double heterostructure at room temperature
  8. Optical gain in GaInN/GaN heterostructures
  9. Theory of laser gain in group-III nitrides
  10. Threshold Estimation of GaN-Based Surface Emitting Lasers Operating in Ultraviolet Spectral Region

Contributed by D. Wiesmann from internet-gateway-x.zurich.ibm.com. on December 23, 1997 10:54:02 AM

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