Data for reference ponce-apl-69-337

Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers

F.A. Ponce, D.P. Bour, W.T. Young, M. Saunders, J.W. Steeds

Applied Physics Letters 69(3), 337 (1996).

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This item is cited by the following items in the database:

  1. Growth of Ga-face and N-face GaN films using ZnO Substrates
  2. MOVPE Growth and Structural Characterization of AlxGa1-xN
  3. Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy
  4. The Polarity of GaN: a Critical Review
  5. Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
  6. Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP)
  7. Review of polarity determination and control of GaN

Contributed by A.E. Nikolaev from shuttle.ioffe.rssi.ru. on Saturday, July 13, 1996 11:55:45 AM
Modified by F. A. Ponce from jumanji.parc.xerox.com. on Friday, May 16, 1997 12:24:59 AM

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