Data for reference nakamura-apl-69-3034

Continuous-wave operation of InGaN multi-quantum-well-structure laser diodes at 233 K,

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku

Applied Physics Letters 69, 3034 (1996).

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This item is cited by the following items in the database:

  1. Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes
  2. Electronic band structures and effective-mass parameters of wurtzite GaN and InN
  3. Uniaxial Strain Effect on the Electronic and Optical Properties of Wurtzite GaN/AlGaN Quantum Well Lasers
  4. Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System

Contributed by A submitted manuscript, on Tuesday, March 11, 1997 2:56:46 PM

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