Data for reference guha-apl-69-2879

Surface lifetimes of Ga and growth behavior on GaN(0001)surfaces during molecular beam epitaxy

S. Guha, N.A. Bojarczuk, D.W. Kisker

Applied Physics Letters 69(19), 2879 (1996).

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This item is cited by the following items in the database:

  1. The role of gaseous species in group-III nitride growth
  2. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
  3. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3

Contributed by S. Yu. Karpov from master.lek.ru. on Thursday, June 19, 1997 12:45:18 PM

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