Data for reference yu-apl-69-2731

The effect of atomic hydrogen on the growth of gallium nitride by molecular beam epitaxy

Z Yu, SL Buczkowski, NC Giles, TH Myers, MR Richards-Babb

Applied Physics Letters 69(18), 2731 (1996).

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This item is cited by the following items in the database:

  1. The role of gaseous species in group-III nitride growth
  2. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
  3. Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy
  4. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
  5. Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces

Contributed by A.E. Nikolaev from 194.85.224.35 on Friday, December 13, 1996 10:37:39 AM

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