Data for reference wei-apl-69-2719

Valence band splittings and band offsets of AlN, GaN, and InN

SH Wei, A Zunger

Applied Physics Letters 69(18), 2719 (1996).

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This item is cited by the following items in the database:

  1. Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes
  2. Electronic band structures and effective-mass parameters of wurtzite GaN and InN
  3. Uniaxial Strain Effect on the Electronic and Optical Properties of Wurtzite GaN/AlGaN Quantum Well Lasers

Contributed by A.E. Nikolaev from 194.85.224.35 on Friday, December 13, 1996 10:49:42 AM

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