Data for reference fischer-apl-69-2716

Properties of GaN grown at high rates on sapphire and on 6H- SiC

S Fischer, C Wetzel, WL Hansen, ED Bourret-Courchesne, BK Meyer, EE Haller

Applied Physics Letters 69(18), 2716 (1996).

Growth of thick GaN films at high growth rate of 0.04 to 0.08 mm/h is reported By direct reaction of ammonia with gallium vapor at 1240 C on sapphire and SiC substrates. Photoluminescence linewidth of 3 meV (6 K) and 100 meV (300K) are obtained.

This item is cited by the following items in the database:

  1. Current status of GaN crystal growth by sublimation sandwich technique
  2. Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP)

Contributed by A.E. Nikolaev from 194.85.224.35 on Friday, December 13, 1996 10:47:17 AM

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