Data for reference tan-apl-69-2364

Damage to epitaxial GaN layers by silicon implantation

HH Tan, JS Williams, J Zou, DJH Cockayne, SJ Pearton, RA Stall

Applied Physics Letters 69(16), 2364 (1996).

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This item is cited by the following items in the database:

  1. Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides

Contributed by A.E. Nikolaev from 194.85.224.35 on Friday, December 13, 1996 10:15:59 AM

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