Data for reference godlewski-apl-69-2089

Time-resolved photoluminescence studies of GaN epilayers grown by gas source molecular beam epitaxy on an AlN buffer layer on (111) Si

M Godlewski, JP Bergman, B Monemar, U Rossner, A Barski

Applied Physics Letters 69(14), 2089 (1996).

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This item is cited by the following items in the database:

  1. Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer

Contributed by H. Marchand from montreal.ucsb.edu. on Wednesday, February 10, 1999 8:49:38 PM

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