Data for reference grandjean-apl-69-2071

Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers

N Grandjean, J Massies, M Leroux

Applied Physics Letters 69(14), 2071 (1996).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE.
  2. Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
  3. Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods
  4. Review of polarity determination and control of GaN

Contributed by A.E. Nikolaev from 194.85.224.35 on Sunday, October 13, 1996 1:22:23 PM


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