Data for reference grandjean-apl-69-2071Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers
N Grandjean, J Massies, M Leroux
Applied Physics Letters 69(14), 2071 (1996).
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This item is cited by the following items in the database:
- Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and
HVPE.
- Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
- Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods
- Review of polarity determination and control of GaN
Contributed by A.E. Nikolaev from 194.85.224.35 on Sunday, October 13, 1996 1:22:23 PM
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