Data for reference nakamura-apl-69-1477

Ridge-geometry InGaN MQW structure laser diodes

S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, H. Kiyoku

Applied Physics Letters 69(10), 1477 (1996).

The Nichia laser was extended to a ridge waveguide geometry to improve electrical and optical confinement, and the laser improved correspondingly. Laser threshold current density was 3 kA/cm2 with a differential quantum efficiency per facet of 30%. The Tzero was 185 K.

This item is cited by the following items in the database:

  1. Room Temperature CW Operation of InGaN MQW Structure Laser Diodes
  2. Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes
  3. Transient four wave mixing experiments on GaN
  4. AlGaN-Based Bragg Reflectors
  5. Optically Pumped InGaN/GaN Double Heterostructure Lasers with Cleaved Facets

Contributed by S. Strite from internet-gw.zurich.ibm.ch. on Thursday, September 12, 1996 11:42:01 AM

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