Data for reference kawakami-apl-69-1414

Recombination dynamics of excitons and biexcitons in a hexagonal GaN epitaxial layer

Y Kawakami, ZG Peng, Y Narukawa, S Fujita , S Fujita , S Nakamura

Applied Physics Letters 69(10), 1414 (1996).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Optical nonlinearities of Gallium Nitride
  2. Properties of the Biexciton and the Electron-Hole-Plasma in Highly Excited GaN
  3. Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.
  4. Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

Contributed by A.E. Nikolaev from 194.85.224.35 on Sunday, October 13, 1996 12:27:57 PM


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