Data for reference buyanova-apl-69-1255

Intrinsic optical properties of GaN epilayers grown on SiC substrates: Effect of the built-in strain

IA Buyanova, JP Bergman, B Monemar, H Amano, I Akasaki

Applied Physics Letters 69(9), 1255 (1996).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
  2. Optical properties of electron-irradiated GaN

Contributed by A.E. Nikolaev from 194.85.224.35 on Sunday, October 13, 1996 12:37:40 PM


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