Data for reference shul-apl-69-1119

Inductively coupled plasma etching of GaN

RJ Shul, GB McClellan, SA Casalnuovo, DJ Rieger, SJ Pearton, C Constantine, C Barratt, RF Karlicek, C Tran, M Schurman

Applied Physics Letters 69(8), 1119 (1996).

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This item is cited by the following items in the database:

  1. New plasma chemistries for etching GaN and InN: BI3 and BBr3
  2. 300°ree;C GaN/AlGaN Heterojunction Bipolar Transistor

Contributed by A.E. Nikolaev from shuttle.ioffe.rssi.ru. on Saturday, September 21, 1996 3:10:13 PM

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