Data for reference rieger-apl-68-970Influence of substrate-induced biaxial compressive stress on the optical properties of thin GaN films
W Rieger, T Metzger, H Angerer, R Dimitrov, O Ambacher, M Stutzmann
Applied Physics Letters 68(7), 970 (1996).
The influence of various thickness of AlN buffer layers on the strain in GaN films is studied using x-ray diffraction, Raman and photoluminescence spectroscopy. Reduction of strain in GaN films with increasing buffer layer thickness is observed. The linear coefficient for the near band gap luminescence shift due to biaxial stain is estimated to be 24 meV/GPa.
This item is cited by the following items in the database:
- Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and
InN
- Nonuniform Morphology and Luminescence Properties of a Molecular Beam
Epitaxy GaN Film from Atomic Force Microscopy, Scanning Electron Microscopy and
Cathodoluminescence
- AlGaN-Based Bragg Reflectors
- Raman characterization of the optical phonons in AlxGa1-xN layers grown by MBE and MOCVD
- Strain relaxation in GaN layers grown on porous GaN sublayers
Contributed by Xiuling Li from cowboy.ccsm.uiuc.edu. on Tuesday, March 19, 1996 1:00:20 PM
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