Data for reference sato-apl-68-935

Highly resistive CH-doped GaN grown by plasma-assisted metalorganic chemical vapor deposition

Michio Sato

Applied Physics Letters 68(7), 935 (1996).

Using plasma-assisted MOCVD, highly resistive GaN films were grown on (0001) sapphire substrates. SIMS data show equal amount of C and H incorporation, suggesting CH complex formation. The CH-doped films remains highly resistive after annealing in N2 up to 900C. The C and H concentrations can be reduced when the Ga and N sources are alternately supplied.

This item is cited by the following items in the database:

  1. Epitaxial Growth of InN by Plasma-assisted MOCVD

Contributed by Andrei Nikolaev from shuttle.ioffe.rssi.ru

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Monday, May 2, 2005 5:34:10 PM.
© 1998 The Materials Research Society