Data for reference leonard-apl-68-794

Photoassisted dry etching of GaN

R. T. Leonard , S. M. Bedair

Applied Physics Letters 68(6), 794 (1996).

Irridiation using a 193 nm ArF laser combined with HCl is found to etch GaN materials. Smooth etch features and distinct sidewalls were observed.

Contributed by Xiuling Li from cowboy.ccsm.uiuc.edu. on Tuesday, March 19, 1996 3:10:57 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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