Data for reference gotz-apl-68-667

Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition

W. Gotz, N. M. Johnson, J. Walker, D. P. Bour, R. A. Street

Applied Physics Letters 68(5), 667 (1996).

Heteroepitaxial layers of GaN, doped with Mg, were investigated by variable temperature Hall effect measurement and phototluminescence. Results pertaining to the activation kinetics of acceptors were obtained.

This item is cited by the following items in the database:

  1. Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE.
  2. Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED's

Contributed by Eric Watko from chaos1.rti.org. on Wednesday, March 6, 1996 4:58:42 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Thursday, April 28, 2005 12:41:45 PM.
© 1998 The Materials Research Society