Data for reference heying-apl-68-643

Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films

B. Heying, X. H. Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. DenBaars, J. S. Speck

Applied Physics Letters 68(5), 643 (1996).

It is demonstrated that low (002) x-ray rocking curve widths for epitaxial h-GaN films on (001) sapphire area result of a specific threading dislocation (TD) geometry.

This item is cited by the following items in the database:

  1. Determination of the dislocation densities in GaN on c-oriented sapphire
  2. Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy
  3. Growth Of High Quality GaN Thin Films By MBE On Intermediate-temperature Buffer Layers
  4. New Technique for Sublimation Growth of AlN Single Crystals

Contributed by Eric Watko from alistair.rti.org. on Monday, March 4, 1996 4:26:46 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Thursday, April 28, 2005 1:18:54 PM.
© 1998 The Materials Research Society